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Ghavam joined IBM Research in 1989. There, he initiated the silicon-on-insulator (SOI) development program. Once the team demonstrated the device design and 5 in. SOI material, the group was moved to IBM Microelectronics and the Advanced Silicon Technology Center (ASTC). Over the next few years, Ghavam led the development of SOI CMOS technology at ASTC. This work resulted in the development of 8-in. SOI technology infrastructure; the demonstration of SOI performance gain; qualification of multiple CMOS SOI technologies and their transfer to manufacturing; establishment of design infrastructure; and the first mainstream use of SOI. He remained with IBM Microelectronics as the director of high-performance logic development until 2003.
Ghavam received his B.S., M.S., and Ph.D. degrees, all in electrical engineering, from MIT.
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