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Ge30Si70 / Si Quantum Well
In the process of creating "strained silicon" to improve the speed of a transistor, we must make atomically abrupt interfaces between silicon and an alloy of germanium and silicon. Using the very small electron beam, we can scan across the interface structure, in a raster fashion, similar to what is done in a tv screen, to produce the image seen here. On the left, the Ge30Si70 alloy is brighter because the Ge influences the electron beam more strongly than silicon. Therefore, we can image the atomic composition at the interface. The pattern in the lower left indicates the degree of ordering, as it did above for the gold crystals.
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