Electron microscopy, using aberration free electron optics, can aid semiconductor development by providing atomic level analysis of composition, structure and function in buried regions of nanoscale devices. Links on the left side panel give a brief overview of electron optical aberration correction, the STEM and EELS techniques, some early results, and references to further reading.
Image: Si [110] projection using a 0.08nm probe at 120 keV
Last updated 13 Feb 2007