Effect of Substrate Bias on Properties of RF-Sputtered Cr–SiO Films
by H. Matino, T. Ushiroda
Properties of rf-sputtered Cr–SiO cermet films have been studied as a function of rf substrate bias. Films with five orders-of-magnitude change in electrical resistivity have been deposited from one Cr–SiO(50:50 wt%) target by changing the substrate bias. Resistivities of about 200 Ω • cm at 5% bias and about 2 × 10−3 Ω • cm at 20% bias have been obtained.
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