Silicon and Silicon-dioxide Processing for High-frequency MESFET Preparation
by T. O. Mohr
Silicon wafer processing is described which provides submicrometer epitaxial layers on top of high-resistivity silicon substrates for fabrication of high-frequency metal-semiconductor field-effect transistors. Silicon-dioxide underetching at the border of an oxide window, performed in hydrogen at elevated temperatures, is one method of realizing 1-micrometer device structures.
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