IBM Journal of Research and Development
IBM Skip to main content
  Home     Products & services     Support & downloads     My account  

  Select a country  
Journals Home  
  Systems Journal  
Journal of Research
and Development
    Current Issue  
    Recent Issues  
    Papers in Progress  
    Recent publications  
    Author's Guide  
  Contact Us  
  Related links:  
     IBM Research  

IBM Journal of Research and Development  
Volume 34, Number 6, Page 806 (1990)
Thin layer formation
  Full article: arrowPDF   arrowCopyright info


Low-temperature Si and Si:Ge epitaxy by ultrahigh-vacuum/chemical vapor deposition: Process fundamentals

by B. S. Meyerson
This paper is an overview of work at the IBM Thomas J. Watson Research Center on the chemical and physical considerations underlying the development of a low-temperature chemical vapor deposition process, designated ultra high-vacuum/chemical vapor deposition (UHV/CVD). The origins of the rigorous vacuum and chemical purity requirements of the process are discussed. Operating in the range of 500°C, the process has made it possible to explore the use, in silicon-based devices and atomic-length-scale structures, of a number of metastable materials in the Si:Ge:B system. Also discussed is associated experimental work on the fabrication of high-speed heterojunction bipolar transistors and high-mobility two-dimensional hole-gas structures.
Related Subjects: Chemical vapor deposition; Semiconductor technology