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IBM Journal of Research and Development  
Volume 16, Number 1, Page 2 (1972)
Nontopical Issue
  Full article: arrowPDF   arrowCopyright info


Silicon Process Technology for Monolithic Memory

by R. H. Collins, E. G. Grochowski, W. D. North
The successful design and production of high density, high speed monolithic memory circuits that can operate efficiently over wide current ranges can be directly attributed to the development of a new silicon process technology based on the <100> crystal orientation. To provide optimum capability to fabricate these circuits with high yields, process modifications to accommodate larger starting substrates (wafers) have also been adopted. Detailed electrical characterization of the resulting devices has confirmed improved circuit operation, demonstrating that improved gain at low current and good junction quality are consequences of the process modifications.
Related Subjects: Manufacturing