IBM Journal of Research and Development
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Related Papers
2006Advanced high-κ dielectric stacks with polySi and metal gates: Recent progress and current challenges
2002CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics
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2002Power-constrained CMOS scaling limits
2002Process modeling for future technologies
2002Reliability limits for the gate insulator in CMOS technology
2000Application of rf discharges to sputtering
1999Titanium dioxide (TiO2)-based gate insulators
1999(Ba,Sr)TiO3 dielectrics for future stacked- capacitor DRAM
1995Low-temperature chemical vapor deposition processes and dielectrics for microelectronic circuit manufacturing at IBM
1970Application of RF Discharges to Sputtering
1970Argon Content of SiO2 Films Deposited by RF Sputtering in Argon
1970Metal Edge Coverage and Control of Charge Accumulation in RF Sputtered Insulators
1970Re-emission of Sputtered SiO2 During Growth and Its Relation to Film Quality
1970Silicon and Silicon-dioxide Processing for High-frequency MESFET Preparation