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IBM Journal of Research and Development  
Volume 13, Number 5, Page 583 (1969)
Instabilities in Semiconductors
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Location of the <111> Conduction Band Minima in the GaxIn1−xSb Alloy System

by M. R. Lorenz, J. C. McGroddy, T. S. Plaskett, S. Porowski
Pressure dependence of the resistivity and optical absorption by conduction band electrons are used to determine the position of the <111> (L1) conduction bank minima in the GaxIn1−xSb alloy system. These experimental data permit a more precise estimate of the position of the L1 minima than had been possible using Gunn effect data alone.
Related Subjects: Instabilities in semiconductors; Physics, solid state; Semiconductor devices