IBM Journal of Research and Development
IBM Skip to main content
  Home     Products & services     Support & downloads     My account  

  Select a country  
Journals Home  
  Systems Journal  
Journal of Research
and Development
    Current Issue  
    Recent Issues  
    Papers in Progress  
    Search/Index  
    Orders  
    Description  
    Patents  
    Recent publications  
    Author's Guide  
  Staff  
  Contact Us  
  Related links:  
     IBM Research  

IBM Journal of Research and Development  
Volume 20, Number 3, Page 228 (1976)
Nontopical Issue
  Full article: arrowPDF   arrowCopyright info





   

LSI Yield Modeling and Process Monitoring

by C. H. Stapper
This paper describes an analytical technique for quantifying and modeling the frequency of occurrence of integrated circuit failures. The method is based on the analysis of random and clustered defects on wafers with defect monitors. Results from pilot line data of photolithographic defects, insulator short circuits, and leaky pn junctions are presented to support the practicality of the approach. It is shown that, although part of the yield losses are due to the clustering of defects, most product loss is from random failures. The yield model shows good agreement with actual product yields.
Related Subjects: Circuit and device technology; Physics, solid state