IBM Journal of Research and Development
IBM Skip to main content
  Home     Products & services     Support & downloads     My account  

  Select a country  
Journals Home  
  Systems Journal  
Journal of Research
and Development
    Current Issue  
    Recent Issues  
    Papers in Progress  
    Search/Index  
    Orders  
    Description  
    Patents  
    Recent publications  
    Author's Guide  
  Staff  
  Contact Us  
  Related links:  
     IBM Research  

IBM Journal of Research and Development  
Volume 23, Number 1, Page 24 (1979)
Sputtering and Plasma Etching
  Full article: arrowPDF   arrowCopyright info





   

Sputtering Process Model of Deposition Rate

by J. H. Keller, R. G. Simmons
A model of the sputtering process has been developed that predicts the deposition rate of a sputtering system with parallel-plate geometry. By using data for sputtering yield vs voltage obtained from an ion-beam sputtering system, the model applies a new theory for computing the backscatter of the sputtered material, and, from the results, predicts deposition rates. The model also considers the effects of charge exchange in the sheaths, and of re-emission of sputtered material at the substrate. The model is valid for magnetic, tuned substrate, driven substrate, and controlled area ratio diode systems. Comparison with observed deposition rates shows good agreement for clean systems. An experimental APL program that uses the model has been written.
Related Subjects: Models and modeling; Sputtering