IBM Journal of Research and Development
IBM Skip to main content
  Home     Products & services     Support & downloads     My account  

  Select a country  
Journals Home  
  Systems Journal  
Journal of Research
and Development
    Current Issue  
    Recent Issues  
    Papers in Progress  
    Search/Index  
    Orders  
    Description  
    Patents  
    Recent publications  
    Author's Guide  
  Staff  
  Contact Us  
  Related links:  
     IBM Research  

IBM Journal of Research and Development  
Volume 21, Number 4, Page 306 (1977)
Nontopical Issue
  Full article: arrowPDF   arrowCopyright info





   

Two-Dimensional Analysis of High-Voltage Power Transistors

by S. P. Gaur
The internal behavior of a typical n-p-n--n+ high-voltage power transistor is presented for several specific steady-state operating conditions obtained from a two-dimensional mathematical model. Internal self-heating and avalanche multiplication effects are taken into account. Poisson's equation, electron and hole continuity equations, and the heat flow equation are solved numerically in a two-dimensional region with the input parameters of device dimensions, doping profile, boundary conditions for external contacts, and various material constants for silicon. The collector n--n+ interface is the region of high electrical and thermal stress that causes second breakdown failure at high-voltage and high-current operating conditions. The combined effects of various high-injection levels are illustrated.
Related Subjects: Circuit and device technology